| PART |
Description |
Maker |
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| PDTD113E PDTD113ET PDTD113EK PDTD113ES |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 k-ohm, R2 = 1 k-ohm
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| TS53YL500OHM/-20TR TS53YL50OHM/-20TR TS53YL20OHM/- |
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 500 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 50 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 20 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 1000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 10 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 5000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 500000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 100000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 10000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 20000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 200000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 200 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 100 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 1000000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 2000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 50000 ohm
|
Vishay Intertechnology, Inc.
|
| PPF450M |
N Channel MOSFET; Package: TO-254; ID (A): 8; RDS(on) (Ohms): 0.42; PD (W): 150; BVDSS (V): 500; Rq: 0.83; 12 A, 500 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| PPF440M |
N Channel MOSFET; Package: TO-254; ID (A): 5; RDS(on) (Ohms): 0.85; PD (W): 125; BVDSS (V): 500; Rq: 1; 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| IRF9640 RF1S9640SM FN2284 |
11A/ 200V/ 0.500 Ohm/ P-Channel Power MOSFETs
From old datasheet system
11A 200V 0.500 Ohm P-Channel Power MOSFETs
11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| APL502B2 APL502L APL502LG |
LINEAR MOSFET
Power MOSFET; Package: TO-264 [L]; ID (A): 58; RDS(on) (Ohms): 0.09; BVDSS (V): 500; 58 A, 500 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
Microsemi Corporation
Microsemi, Corp.
|
| SFF450/61 SFF450-61 |
13 AMP 500 Volts 0.40 OHM N-Channel POWER MOSFET
13 AMP 500 Volts 0.40 OHM N-Channel POWER MOSFET 13 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-61
|
Solid States Devices, Inc.
Solid State Devices, Inc.
|
| RF1S4N100SM RFP4N100 FN2457 |
4.3A/ 1000V/ 3.500 Ohm/ High Voltage/ N-Channel Power MOSFETs
4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| IRF450 |
13 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
|
MICROSEMI CORP-LAWRENCE
|
| 2SK3200 |
10 A, 500 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SANKEN ELECTRIC CO LTD
|
|
